Low Energy Ion Implantation Induced Intermixing in Photonic Devices:
Abstract
Quantum Well Intermixing (QWI) induced by low energy ion implantation is a technique well fitted for multiple wavelength integration on a single photonic device. Structural defects are created by ion implantation in the near-surface region. When the structure is thermally annealed, the defects diffuse and induce intermixing at QW interfaces, locally blue-shifting their emission wavelength by the amount required for the different components of an integrated photonic device. Although ion implantation-induced QWI has been studied in details for specific structures, the relation between the amount and type of damage created by implantation and the observed blue-shift is not fully understood yet. In order to understand the fundamentals of the process, information on the actual defect distribution after implantation and its relation with implantation temperature is of prime importance. In this work, we use Rutherford Backscattering Spectrometry in channelling mode (RBS-c) to measure the defect profiles obtained after room temperature and 200 °C implantations of 200 keV As or P ions in InGaAs/InGaAsP QW laser structures. They are interpreted in terms of the photoluminescence (PL) for these samples and results obtained from other experiments. They reveal how damage accumulation actually hampers the effect, while long dechanneling tails are observed for high temperature implants, for which the highest blue-shifts are achieved.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2004
- Bibcode:
- 2004APS..MARS10011S