Defects Introduced by High Energy Proton Irradiation in GaAs Diodes
Abstract
Deep-level traps produced by 10 and 53 MeV proton irradiations at room temperature in p+n GaAs diodes, grown by molecular beam epitaxy, have been studied using Deep Level Transient Spectroscopy (DLTS) based on Fourier analysis. Six distinct majority carrier electron traps and five minority carrier hole traps were observed after irradiation. The electron traps have been identified as PR1, PR2, PR3, PR4', PR4", and PR5. The hole traps have been labeled PH1, PH2, PH3, PH4, and PH5. A direct comparison is made between the traps produced at the different proton energies studied. Some of the traps observed at 53MeV where not seen in the DLTS spectra following 10 MeV irradiation. The presence of these defects may be associated with the formation of a cluster-type defect after 53 MeV irradiation. The electron trap PR4' appears to be the dominant recombination center from DLTS results obtained using minority carrier injection pulsing conditions. The trap activation energy, capture cross-section were calculated. The energy dependence of the majority carrier introduction rates were determined and compared with the calculated nonionizing energy loss (NIEL) for protons on GaAs.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2004
- Bibcode:
- 2004APS..MARS10007W