The effects of etching Si/SiGe 2DEGS: transport measurements of nanochannels
Abstract
Vertical etching is an effective way of confining electrons in Si/SiGe 2DEGS on the nanometer scale. The resulting exposed sidewalls have surface states that deplete the nearby electron gas and increase scattering. We characterize these effects by making transport measurements of numerous nano- and micro-channels etched into the 2DEG. The channels are defined by electron beam lithography and have widths ranging from 100nm to 1500nm. We compare the results of different etches, including CF4 and SF6. We find surface depletions of order one hundred nanometers - in good agreement with our numerical simulations and measurements of similarly etched devices.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2004
- Bibcode:
- 2004APS..MARJ15008L