On the temperature dependence of the linear optical response of bulk GaAs
Abstract
Linear optical probes are widely used to monitor various physical properties of semiconductor surfaces and overlayers in chemically active environments such as MOVPE, MBE, etc., over a wide temperature range. However, the traditional optical calculations used to interpret the data are strictly valid only at zero temperature. We propose to take into account the temperature dependence of the linear optical response by averaging the calculated dielectric function over structural configurations in a supercell that is a multiple of the size of the primitive unit cell. Optical calculations by the tight-binding method, using atomic displacements extracted from an ab-initio molecular dynamics simulation, are found to be in good agreement with the experimentally observed temperature dependencies of the interband critical points.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2004
- Bibcode:
- 2004APS..MARJ11009S