High pressure electrical resistivity of uranium using Designer Diamond Anvils
Abstract
Designer Diamond Anvil Cells consist of lithographically deposited tungsten leads on a diamond culet, followed by epitaxial diamond deposition to electrically insulate the leads from a metallic gasket. Using this technique, the electrical resistivity of uranium has been measured at room temperature as a function of pressure up to 500 kbar. Designer diamond anvils have also been used to measure the temperature dependence of uranium from 300 K to 20 K at various pressures. A smooth drop in the resistance as a function of pressure is observed, and no phase transitions are found.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2004
- Bibcode:
- 2004APS..MARH27011J