Fabrication and Electronic Behavior of Single Ge Nanowire Devices
Abstract
Device characteristics of single Ge nanowire devices fabricated with gold electrical contacts patterned by e-beam lithography are compared with devices prepared using focused e-beam or Ga-beam assisted Pt chemical vapor deposition. These device structures permit direct investigation of the influence of nanowire surface chemistry, doping, and gate electrode architecture, on device operation. The surface conductivity contribution to electron transport through individual wires was studied by comparing measurements on nanowires with various surface terminations. The effect of area-selective Ga doping by focused ion beam implantation was explored. Field effect transport modulations via different gating architectures were compared before and after thermal anneal to distinguish the effects of carrier depletion in the channel from field modulation of a Schottky barrier at the nanowire/metal contact. AC transport measurements were also performed and correlated with diameter dependent plasmon energies measured with electron energy loss spectroscopy.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2004
- Bibcode:
- 2004APS..MARB16009H