Optical Characterization of GaAsBi
Abstract
The optical transitions in GaAs_1-xBix (x<3.6%) were studied by electromodulated and photoluminescence spectroscopy. We find a rapid decrease of the band gap energy as a function of Bi concentration, indicative of a considerable bowing coefficient. The valence band splitting increases faster than that of GaAs under similar compressive strain whereas the temperature dependence of the observed GaAsBi transitions is similar to that of GaAs. An analysis of photoluminescence results will be presented and a discussion of the characteristics of GaAsBi with respect to other isoelectronic alloys will be given.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2004
- Bibcode:
- 2004APS..MARA11013F