An Integrated AFM/Raman Tool for Local Stress Measurements of MEMs Devices
Abstract
Microelectromechanical (MEMs) devices are composed of silicon structures of various geometries and forms. Raman microspectral analysis has been recognized for many years as a tool that could monitor local stress in silicon. Atomic force microscopy (AFM) has also been used for many years for characterizing MEMs structures. Although numerous papers have been published with each of these tools on these devices the world of AFM and Raman have been separate and apart. We present the first tool that combines the uniqueness of AFM for mechanical characterization with the capability of Raman to measure the chemical characteristics associated with local and highly defined silicon stress. Raman shift as a function of local stress produced by AFM probe for different probe positions and for different pressure values was measured. The results indicate that increasing of mechanical stress leads to shift of the Raman peak. In summary, this tool is an ideal integration of the worlds of AFM mechanics with the world of Raman material characterization and the specific application for MEMs device characterization highlights the importance of this combination.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2004
- Bibcode:
- 2004APS..MAR.R1224D