High-k titanium silicate dielectric thin films for CMOS applications
Abstract
We report on the deposition of high-k titanium silicate (TiSiO_4) dielectric thin films by means of two different techniques, namely the pulsed laser deposition (PLD) and rf-magnetron sputtering. The bonding states and microstructure of the deposited films were characterized as a function of growth conditions. XPS and FTIR characterizations have provided clear evidence for the presence of Si-O-Ti bonds in the deposited films indicating thereby the formation of the titanium silicate phase. The electrical properties of the TiSiO4 films (including dielectric constant, dielectric loss, leakage current and breakdown voltage) were systematically determined through their integration into Pt/TiSiO_4/Pt metal-insulator-metal devices. Deposition conditions that yield TiSiO4 thin films with excellent dielectric properties are thus identified. These silicate films were found to exhibit a high-k value of ∼ 30, a dissipation factor as low as ∼ 0.01, and a leakage current lower than 10-6 A/cm^2 at 1 MV/cm. Finally, predominant conduction mechanisms in these TiSiO4 insulating films are discussed.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2004
- Bibcode:
- 2004APS..MAR.K1140B