A multi-defect initialization-based percolation model: a successful scheme to explain dielectric breakdown in MOS devices

We generalize a two-dimensional dynamic percolation model of dielectric breakdown of the SiO ₂ in metal-oxide-semiconductor capacitors to include the effect of device area and oxide defect concentration. The strategy allows for dielectric breakdown to start in several points (seeds) of the Si/SiO ₂ interface. The results which arise for the behavior of the time to dielectric breakdown ( t_BD) with area, and the effect of the number of seeds (defects) at the interface allow for an improved agreement with experimental results.