Dicarbon defects in carbon-doped GaAs
Abstract
Carbon-doped GaAs (GaAs:C) samples have been grown using the solid source molecular-beam epitaxy system and carbon tetrabromide (CBr4) as the carbon-doping source. For the purpose of investigation, a relatively high substrate temperature of 650 °C was used to induce the formation of dicarbon defects in selected samples. Hall effect, secondary-ion mass spectroscopy (SIMS), and x-ray-diffraction (XRD) measurements have been used for sample characterization. Using data from Hall effect and SIMS measurements, calculations on the lattice mismatch induced by several possible structures of the dicarbon defect were carried out. A comparison between calculated results and lattice mismatch measured by XRD suggests the dicarbon defects in compensated GaAs:C samples exist mainly as deep donors and are oriented along the <111> crystal direction.
- Publication:
-
Physical Review B
- Pub Date:
- January 2003
- DOI:
- 10.1103/PhysRevB.67.035208
- Bibcode:
- 2003PhRvB..67c5208T
- Keywords:
-
- 61.72.Vv;
- 61.72.Ji;
- Doping and impurity implantation in III-V and II-VI semiconductors;
- Point defects and defect clusters