Structural and electronic properties of amorphous and polycrystalline In2Se3 films
Abstract
Structural and electronic properties of amorphous and single-phase polycrystalline films of γ- and κ-In2Se3 have been measured. The effect of deposition conditions on the film phase was studied extensively. The stable γ phase nucleates homogeneously in the film bulk and has a high resistivity, while the metastable κ phase nucleates at the film surface and has a moderate resistivity. The microstructures of polycrystalline hot-deposited and postannealed, cold-deposited γ films are quite different but their electronic properties are similar. The increase in the resistivity of amorphous In2Se3 films upon annealing is interpreted in terms of the replacement of In-In bonds with In-Se bonds during crystallization. Great care must be taken in the preparation of In2Se3 films for electrical measurements as the presence of excess chalcogen or surface oxidation may greatly affect the film properties.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- August 2003
- DOI:
- 10.1063/1.1592631
- arXiv:
- arXiv:cond-mat/0303369
- Bibcode:
- 2003JAP....94.2390C
- Keywords:
-
- 68.55.Ac;
- 73.61.Jc;
- 73.61.Le;
- 72.80.Jc;
- 68.55.Nq;
- 68.55.Jk;
- 61.72.Cc;
- 64.60.Qb;
- 81.15.-z;
- 73.50.Dn;
- 61.50.Lt;
- 61.43.Dq;
- 72.80.Ng;
- 81.05.Hd;
- 81.05.Gc;
- Nucleation and growth: microscopic aspects;
- Amorphous semiconductors;
- glasses;
- Other inorganic semiconductors;
- Other crystalline inorganic semiconductors;
- Composition and phase identification;
- Structure and morphology;
- thickness;
- crystalline orientation and texture;
- Kinetics of defect formation and annealing;
- Nucleation;
- Methods of deposition of films and coatings;
- film growth and epitaxy;
- Low-field transport and mobility;
- piezoresistance;
- Crystal binding;
- cohesive energy;
- Amorphous semiconductors metals and alloys;
- Disordered solids;
- Other semiconductors;
- Condensed Matter - Materials Science
- E-Print:
- 23 pages and 12 figures