Low optical loss germanosilicate planar waveguides by low-pressure inductively coupled plasma-enhanced chemical vapor deposition
Abstract
This Letter reports on the preparation and properties of germanium-doped silica thin films by a new technique namely inductively coupled plasma-enhanced chemical vapor deposition (ICP-CVD). 13.56 MHz ICP was generated inside the chamber upon the supplying of 1 KW r.f. power at 2.5 Pa. The Films have been deposited on Si-wafers from the tetraethoxysilane, tetramethoxygermane and oxygen system at 400 °C. The behaviors of ∼200 and ∼240 nm UV absorptions under different treatment conditions comprising annealing temperatures and excimer laser exposure have been systematically investigated. A low propagation loss of ∼0.1 dB/cm at 1550 nm has been achieved.
- Publication:
-
Chemical Physics Letters
- Pub Date:
- January 2003
- DOI:
- 10.1016/S0009-2614(02)01837-7
- Bibcode:
- 2003CPL...368..183Z