Characterization of Planarized Low-k Dielectrics by Atomic Force Microscopy
Abstract
Low-k dielectrics have been introduced into integrated circuits to reduce their capacitance and improve operating speeds. During the production of these circuits, these materials will be exposed to repeated chemical mechanical planarization (CMP). The effects of CMP on three low k materials were studied by using solutions of varying pH and concentrations of benzotriazole, a corrosion inhibitor. Atomic Force Microscopy was then used to evaluated the RMS roughness of the materials and determine their durability during CMP. Fourier Transform Infrared Spectroscopy was also used to support the information gathered on the low-k materials.
- Publication:
-
APS Texas Sections Fall Meeting Abstracts
- Pub Date:
- October 2003
- Bibcode:
- 2003APS..TSF.C1006C