Atomic Resolution Scanning Tunneling Microscopy of FeSi2 Films Grown on Si (111) using Reactive Deposition Epitaxy
Abstract
FeSi2 is a direct band gap semiconductor with a band gap of approximately 0.8 eV having great potential for the realization of Si optoelectronic devices. We report atomic resolution ultrahigh vacuum (UHV) scanning tunneling microscopy (STM) studies of FeSi2 films grown on Si (111) substrates using reactive deposition epitaxy. Half a monolayer of Fe was deposited on Si (111) and then the sample was annealed for 5 minutes at a temperature of 500 C in UHV. UHV STM showed FeSi2 islands having a 2x2 hexagonal structure. Some surface roughening as a result of annealing was observed. Atomic force microscopy studies of the films carried out in air confirmed the island formation observed using UHV STM. This work was supported by the Texas Advanced Technology Program.
- Publication:
-
APS Texas Sections Fall Meeting Abstracts
- Pub Date:
- October 2003
- Bibcode:
- 2003APS..TSF.A3006B