Testing charge transport of Schottky diodes with parallel contacts of metal and conjugated polymer on indium phosphide.
Abstract
Charge transport mechanisms that explain atypical electrical characteristics in Schottky diodes have been studied and debated for many years. One mechanism that has received recent attention has been non-uniform, or heterogeneous, barrier heights at the interface. In order to account for the voltage and temperature dependencies on the current, low barrier heterogeneities have been predicted to occur on the order of the width of the depletion region or smaller. Our research uses a unique tool in testing these predictions: a conjugated polymer interface to indium phosphide. This interface is well-modeled by standard thermionic emission theory near room temperature, and the barrier height can be tuned over several orders of magnitude in current using electrochemical manipulation on one device. By introducing lithographically prepared low-barrier metal contacts in parallel with the polymer contact, barrier heterogeneity is created and the voltage and temperature dependence of the current can be tested and compared to existing theory.
- Publication:
-
APS Northwest Section Meeting Abstracts
- Pub Date:
- May 2003
- Bibcode:
- 2003APS..NWS.J1002J