Simultaneous observation of electron and hole velocity overshoots in an AlGaAs-based p-i-n semiconductor nanostructure
Abstract
We report experimental results on simultaneous measurement of electron as well as hole transient transport in an AlGaAs-based p-i-n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. It is demonstrated that at T = 300 K, E = 15 kV/cm, and electron-hole pair density of n = 5x10**17 cm-3, electron overshoots its steady-state value by a factor of about 7; whereas hole about 2.5. These experimental results are discussed and explained.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2003
- Bibcode:
- 2003APS..MARS25005L