Resonant Raman study of GaAs_1-xN_x

Nitrogen-induced electronic states in GaAs_1-xN_x are studied using resonant Raman scattering at low temperature. Careful study of both the zone-center and the zone-boundary phonons with respect to their Raman intensity and line width provides unambiguous clues on the nature and origin of various electronic states observed in electroreflectance and high-pressure measurements. LO phonon line width resonance analysis provides strong evidence of spatially localized electronic states whereas LO phonon intensity resonance strongly correlates to the perturbed host electronic states in GaAs_1-xN_x.