Compositional and Structural Analysis of GaInAsSb Epitaxial Layers Grown by Liquid Phase Epitaxy
Abstract
In this work we present the X ray diffraction results of GaInAsSb layers grown by the liquid phase epitaxy technique. The substrate used is commercial Te doped GaSb (100. In the growth process of the studied samples we used different parameters such as initial solution concentration and cooling rate. The influence of these values on the presence of new phases on the solid solution layer was analyzed. The determination of chemical composition of the semiconductor layers was achieved by XPS analysis. A first approach to the activation energy values, determinant in the adatoms surface diffusion, was done using the steps width on terraces obtained by atomic force microscopy.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2003
- Bibcode:
- 2003APS..MAR.J1131T