Characteristics of the ratio of N/Ga on undoped GaN thin film by RF-MBE
Abstract
The undoped GaN thin films were grown on the sapphire along c-direction by radio frequency plasma assisted molecular beam epitaxy equipped with an EPI UNI-Bulb nitrogen plasma source. We varied the beam equivalent pressure of N/Ga while grew GaN epilayer. The samples were investigated by reflection high-energy electron diffraction, photoluminescence, high-resolution x-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, and Hall measurement. The sample of a-bit nitrogen rich had a better crystallization, which showed the narrower peak width in the HRXRD measurements. The sample of a bit gallium rich had a better morphology, determined by FESEM image, and the smaller FWHM of PL spectrum. The growth conditions for the optimal electronic properties are under investigation.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2003
- Bibcode:
- 2003APS..MAR.J1123T