Self-consistent simulation of N_2/H2 gas plasma for low-k material etching
Abstract
We have developed a self-consistent modeling tool for H_2/N2 gas in two-frequency capacitively coupled plasma (2f-CCP) [1], based on the relaxation continuum (RCT) model [2]. As the resistance-capacitance (RC) delay of signals through interconnection materials becomes important, low-k materials have been proposed to solve the probelm. H_2/N2 gas is a promising candidate for the etching of future low-k dielectric materials because of high selectivity and environmentally friendly process. There are many reactions among the vibrationally excited states, electronically excited states, and ionized plasma in the N_2/H2 gas, that have to be considered self-consistently. In this model, plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatiotemporal periodic steady state profile could be obtained. The spatiotemporal profiles and reactions of plasma and neutrals are discussed as a simulation results of the model. [1] C. H. Shon and T. Makabe, Submitted to Phys. Rev. E. [2] T. Makabe, "Advences in Low Temperature RF plasmas" (Elsevier, 2002).
- Publication:
-
APS Annual Gaseous Electronics Meeting Abstracts
- Pub Date:
- October 2003
- Bibcode:
- 2003APS..GECXF2004S