Uncertainty analysis of C_4F8 based plasma chemistry in the gas phase
Abstract
Octafluorocyclobutane (c-C_4F_8) based plasmas are widely used in the etching of dielectric films. The modeling of these plasmas is, however, severely limited by the uncertainties in the chemical kinetics data. The uncertainties are especially large in the cross sections of electron impact dissociation of C_4F8 into neutral fragments, and their subsequent dissociation into smaller fluorocarbon radicals. Adequate tracking of these reaction pathways are critical in predicting the densities of CFx radicals and C and F atoms that are primarily responsible for polymer formation and etching. In this work we assess the propagation of these rate uncertainties into the model outputs using a monte carlo analysis. We also perform global sensitivity analysis to identify the largest sources of uncertainties and the dominant pathways in the C_4F8 mechanism. Comparisons with experimental data available in the literature will be made to gain insight and possibly reduce some model uncertainties.
- Publication:
-
APS Annual Gaseous Electronics Meeting Abstracts
- Pub Date:
- October 2003
- Bibcode:
- 2003APS..GECTR2001B