Using RF measurements and simple, empirical plasma models to enhance the performance of dielectric etch systems
Abstract
Control of RF power delivery is an essential part of the overall operation of a plasma processing chamber. By in large, the majority of commercial plasma chambers rely on the RF power as the main control parameter. Previous work by others has shown benefits of controlling plasma processing based on individual RF parameters such as total RF current or peak-to-peak voltage; however, these approaches are still largely based on heuristic arguments. Alternatively, the advent of commercially available accurate RF probes, RF measurements of a known reference point between the matchbox and cathode, combined with RF characterization of the process chamber and a simple plasma model can provide information about the plasma discharge and on-wafer conditions that can be used to develop a control scheme which can provide a more direct control of the plasma process. In this work, the integration of RF metrology into plasma processing systems was developed. This work included a methodology for characterizing a process chamber and development of models that could be easily analyzed in a real-time control algorithm. Validation of the model was made through comparison to other plasma diagnostics. Finally, implementation of this simple RF/plasma model to provide consistent, high quality etch performance on Applied Materials dielectric etch tools will be presented.
- Publication:
-
APS Annual Gaseous Electronics Meeting Abstracts
- Pub Date:
- October 2003
- Bibcode:
- 2003APS..GECHW1004S