An electron holography study of GaN p-n junction
Abstract
It is of great interest from both a scientific and an engineering point of view that the potential profile across GaN p-n junction is measured. Electron holography is an advanced technique based on transmission electron microscopy. It can produce the inner potential maps of materials with a high spatial resolution. Using this technique, we investigate the internal field in a GaN p-n junction. A sharp junction was observed in the potential maps of a diode. However, the measured potential steps across the junction are much smaller than expected. The effect of specimen preparation on the measurement has been considered in order to clarify the discrepancy. This study indicates that electron holography is an effective way to profile the potential step in GaN p-n junctions qualitatively, but quantitative measurements should take into consideration the effect of foil specimen preparation.
- Publication:
-
APS Four Corners Section Meeting Abstracts
- Pub Date:
- October 2003
- Bibcode:
- 2003APS..4CF.F3002L