Enhanced Tunnel Magnetoresistance in Ferromagnetic Single Electron Transistor
Abstract
The tunnel magnetoresistance (TMR) of ferromagnetic single-electron transistors made of Ni and Co has been measured. We found that the TMR is enhanced by a factor about 10 between 4.2 K and 25mK in almost all devices including those whose junction resistance is much higher than the quantum resistance. This indicates that the theories based on the higher-order tunneling are not sufficient to explain the enhancement.
- Publication:
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Foundations of Quantum Mechanics in the Light of New Technology ISQM-Tokyo 2001
- Pub Date:
- October 2002
- DOI:
- Bibcode:
- 2002fqml.conf..233M