Enhancement of Jc and crystal alignment by reverse ISD method

A new deposition technique, `reverse' inclined substrate deposition (RISD), was introduced to reduce the <1 0 0> tilt angle of the buffer layer against the substrate normal, originated by the conventional ISD method. The tilt angles of both superconducting layer and cap layer were successfully reduced. The J_c values were enhanced by the RISD method. The J_c values of RISD samples were approximately two times as high as those of ISD samples. The cap layer was also deposited on both ISD and RISD buffer layers. Both <1 0 0> tilt angle and in-plane orientation were improved by the RISD.