Single-electron transistors with point contact channels
Abstract
Single-electron transistors with point contact channels have been fabricated by using a new nanoelectrode-pair technique. Coulomb blockade oscillations are observed from most of these devices and these oscillations are nonperiodic as no voltage bias is applied to the nanoelectrode pair. Applying a negative bias squeezes the point contact channel and makes the oscillations periodic. This is explained by the formation of single dot structures.
- Publication:
-
Nanotechnology
- Pub Date:
- April 2002
- DOI:
- 10.1088/0957-4484/13/2/317
- Bibcode:
- 2002Nanot..13..221W