Raman investigations on nitrogen ion implantation effects on semi-insulating InP
Abstract
Raman scattering measurements on liquid-encapsulated Czochralski-grown Fe-doped semi-insulating InP(1 0 0) single crystal substrates have been carried out before and after 120 keV N + implantation for various doses from 10 13 to 10 15 cm -2 and also after post-implantation rapid thermal annealing of these samples. It is observed that LO phonon mode frequency decreases and full width at half maximum (FWHM) increases with fluence due to implantation-induced lattice damage. Forbidden Raman TO mode in (1 0 0) cut InP is observed at the doses of 5×10 13 and 5×10 14 cm -2. This might have appeared due to the polycrystalline and/or misoriented regions created during implantation. TO mode is not observed for high doses in as-implanted samples due to excessive lattice damage induced by the implantation. On rapid thermal annealing at 573 K for 30 s, the implanted samples show a partial recovery of LO phonon mode frequency and FWHM due to partial annealing of the damage. On partial annealing of the implantation-induced defects, TO mode FWHM decreases and area under the peak increases for all the doses from 10 13 to 10 15 cm -2.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- October 2002
- DOI:
- 10.1016/S0168-583X(02)00954-0
- Bibcode:
- 2002NIMPB.194..451S