Preparation of BaTiO3-BaZrO3 Films by Metal-Organic Chemical Vapor Deposition
Abstract
Barium titanate zirconate (Ba(Ti1-xZrx)O3) films in the range of x=0 to 1.0 were prepared on (100)Pt/(100)MgO substrates at 973 K by metalorganic chemical vapor deposition (MOCVD). The effects of zirconium content (x) on the microstructure and dielectric properties of films were investigated. At x≤ 0.15, the Ba(Ti1-xZrx)O3 films showed highly crystallized and significant (001) orientation. The (001) orientation of the films decreased with increasing x, and the orientation became random at x>0.36. The dielectric constant of Ba(Ti1-xZrx)O3 films changed with x from 35 to 689 and showed a maximum at x=0.15. The remanent polarization (2Pr) and the coercive field (2EC) of Ba(Ti0.85Zr0.15)O3 film were 3 μC\cdotcm-2 and 14 kV\cdotcm-1, respectively. The onset electric field for nonohmic conduction of Ba(Ti1-xZrx)O3 film increased from 10 k to 1 MV\cdotcm-1 with increasing x.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- November 2002
- DOI:
- 10.1143/JJAP.41.6643
- Bibcode:
- 2002JaJAP..41.6643T