Electroluminescence of In0.53Ga0.47As/GaAs0.5Sb0.5 Type-II Multiple Quantum Well Light-Emitting Diodes Grown on (111)B InP by Molecular Beam Epitaxy

In_0.53Ga_0.47As/GaAs_0.5Sb_0.5 type-II multiple-quantum-well (MQW) light-emitting diodes were grown on (111)B InP substrates by molecular beam epitaxy. The peak wavelength of the electroluminescence (EL) was at 2.08 μm at 11 K and at 2.28 μm at 300 K. It was found that the EL intensity of the type-II MQW diode on (111)B substrates was about one order of magnitude stronger than that on (100) InP substrates, which can be explained by the improved crystal quality of the MQW diode on the (111)B InP substrate.