Temperature-Stable Wavelength TlInGaAs/InP Double Heterostructure Light-Emitting Diodes Grown by Gas Source Molecular Beam Epitaxy
Abstract
TlInGaAs/InP double heterostructure light-emitting diodes were grown on (100) InP substrates by gas source molecular beam epitaxy. The Tl composition was 6%. They were operated at up to 340°C with a wavelength around 1.58 μm. Very small temperature dependence of the electroluminescence peak energy (-0.09 meV/K) was observed, which is similar to the temperature dependence of the photoluminescence peak energy.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- February 2002
- DOI:
- 10.1143/JJAP.41.1168
- Bibcode:
- 2002JaJAP..41.1168L