Structural analysis of Si-doped AlGaN/GaN multi-quantum wells
Abstract
The effect of Si doping on the structural properties of AlGaN/GaN multi-quantum well layers grown on GaN was investigated. V-shaped defect was formed by Si-doping. PL intensity gradually increases with Si doping. But when the Si concentration exceeds 4.2×10 19 cm -3, PL intensity rapidly decreased with the formation of V-shaped defect.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- April 2002
- DOI:
- 10.1016/S0022-0248(01)02069-3
- Bibcode:
- 2002JCrGr.237.1129N