Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers
Abstract
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- September 2002
- DOI:
- 10.1109/JQE.2002.802165
- Bibcode:
- 2002IJQE...38.1238O