Magnetoresistance of boron-doped chemical vapor deposition polycrystalline diamond films
Abstract
The electrical properties and magnetoresistance of boron-doped polycrystalline diamond films grown on p-typed Si (100) by hot filament chemical vapor deposition have been investigated. As the atomic boron concentration increases from 3×10 17 to 3×10 19 cm -3, and grain size from 5 to 15 μm, the quality of diamond is improved, which causes the carrier mobility μ and longitudinal magnetoresistance change rate Δρ ///ρ 0 to increase. For a magnetic field (B) of 20 tesla and temperature 300 K, the longitudinal resistance change rate Δρ ///ρ 0 is up to 20%. Meanwhile, Δρ ///ρ 0 is proportional to μ 2 B 2 in a low field and proportional to μ 1.5 B in a high field. It is the first time that a result is obtained in a high field.
- Publication:
-
Diamond and Related Materials
- Pub Date:
- 2002
- DOI:
- 10.1016/S0925-9635(01)00516-7
- Bibcode:
- 2002DRM....11...49F
- Keywords:
-
- 73.50.J;
- 68.55.L;
- 81.15.G;
- 81.05.T