Optical properties of donor-triad cluster in GaAs and GaN
Abstract
The effect of the transition energy of three-donor clusters on far infrared absorption in n-type semiconductor materials has been investigated by a multiconfigurational self-consistent-field model calculation and applied to GaAs and GaN systems. We show that it is crucial to consider the many-particle correlation effects within three-donor clusters. With electron correlation taken into account, the present results support the interpretation of a very recent unidentified peak energy observed in absorption measurement of GaN as due to electronic transitions in these clusters. We also corroborate the suggestion that the X line in GaAs arises from such transitions.
- Publication:
-
Applied Physics Letters
- Pub Date:
- October 2002
- DOI:
- 10.1063/1.1515121
- Bibcode:
- 2002ApPhL..81.3158S
- Keywords:
-
- Absorption Spectra;
- Broadband;
- Dielectric Properties;
- Donor Materials;
- Electronic Structure;
- Energy Absorption;
- Far Infrared Radiation;
- Gallium Arsenides;
- Gallium Compounds;
- Impurities;
- Infrared Spectra;
- N-Type Semiconductors;
- Optical Properties;
- Self Consistent Fields;
- Semiconductors (Materials);
- 78.30.Fs;
- 71.45.Gm;
- 78.20.Ci;
- 71.15.Mb;
- 71.55.Eq;
- Solid-State Physics;
- III-V and II-VI semiconductors;
- Exchange correlation dielectric and magnetic response functions plasmons;
- Optical constants;
- Density functional theory local density approximation gradient and other corrections;
- III-V semiconductors