Electronic properties of vacancy-oxygen complex in Ge crystals
Abstract
It is argued that the vacancy-oxygen (VO) complex (A center) in Ge has three charge states: double negative, single negative, and neutral. Corresponding energy levels are located at Ec-0.21 eV (VO--/-) and Ev+0.27 eV (VO-/0). An absorption line at 716 cm-1 has been assigned to the asymmetrical stretching vibration mode of the doubly negatively charged VO complex.
- Publication:
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Applied Physics Letters
- Pub Date:
- September 2002
- DOI:
- Bibcode:
- 2002ApPhL..81.1821M
- Keywords:
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- germanium;
- elemental semiconductors;
- oxygen;
- impurity-vacancy interactions;
- A-centres;
- infrared spectra;
- vibrational states;
- deep level transient spectroscopy;
- Crystal Defects;
- Crystal Lattices;
- Electrical Properties;
- Germanium;
- Impurities;
- Infrared Spectra;
- Oxygen;
- Phonons;
- Semiconductors (Materials);
- Spectroscopy;
- Vibrational States;
- 71.55.Cn;
- 61.72.Yx;
- 61.72.Ji;
- 63.20.-e;
- 78.30.Am;
- Solid-State Physics;
- Elemental semiconductors;
- Interaction between different crystal defects;
- gettering effect;
- Point defects and defect clusters;
- Phonons in crystal lattices;
- Elemental semiconductors and insulators