Electronic current in AFM nanolithography on silicon
Abstract
We report anomalously high current (up to 300 microamps) in direct scanning probe oxidation on the surfaces of n- and p-type silicon 100. Conventional atomic force (AFM) nanolithography involves currents on the order of nanoamps and associated with the transport of hydroxyl ions inside the water meniscus surrounding an AFM tip. We observe an extreme growth of the current above a threshold bias voltage (typically -10-20 Volts) applied between an AFM tip and the silicon substrate. This anomalous current exhibits Ohmic behavior and apparently is the result of electrical breakdown in the meniscus of water resulting in conductivity dominated by "hoping" electrons. This effect leads to a new principle based on a combination of AFM nanolithography and holography: nanoholography. This principle should permit nanolithography on semiconductor and metal surfaces to be performed in parallel (i.e. quickly) with high spatial resolution. The electrons generated in water meniscus from splitted (or two different) AFM tip(s) in close proximity to a surface coherently interfere to record holograms on surfaces, thus significantly improving the speed at which we create nanostructures.
- Publication:
-
APS Ohio Sections Spring Meeting Abstracts
- Pub Date:
- April 2002
- Bibcode:
- 2002APS..OSS.B1007L