Nanolithography on Zirconium Surfaces
Abstract
We report, for the first time, scanning probe nanolithography on single crystal zirconium (Zr) surfaces using an atomic force microscope (AFM) tip in air. Preliminary experiments indicate that the size of the nanostructures written on Zr is 50 - 100 nm with applied DC voltages of 1 - 25 V and exposure times in the range of 1 - 60 seconds. We study the dependence of the size of the nanostructures on the magnitude of the applied voltage and current through the Zr substrate. This allows us to compare the results of SPM lithography on Zr with those on Si. Apparently, the nature of the current in these two cases is different. The current during high voltage Si oxidation exhibits Ohmic behavior and can reach 300 microamps. We believe that this current is the result of electrical breakdown in the meniscus of water resulting in conductivity dominated by electron mobility. In the case of Zr, the magnitude of the DC current is very small (less than 1 microamp) and exhibits typical Faradic behavior related with the transport of hydroxyl ions from an AFM tip down to the Zr surface. Lithographic oxidation of Zr surfaces is a very promising step toward the development of a comprehensive description of the nanolithographic process and complements our efforts to prepare Zr surfaces with novel properties via hyperthermal chemical reaction pathways.
- Publication:
-
APS Ohio Sections Spring Meeting Abstracts
- Pub Date:
- April 2002
- Bibcode:
- 2002APS..OSS.B1005F