Nuclear and Electronic Energy Loss of 2-60 keV Ions in Silicon
Abstract
We measure the response of silicon photodiodes to irriadiation by H^+, He^+, C^+, N^+, O^+, Ne^+, and Ar^+ ions with energies up to 60 keV. The unique properties of these photodiodes, including an ultrathin Si02 dead layer and 100% internal carrier collection efficiency, allow direct measurement of the total energy lost to nuclear(non-ionizing) and electronic(ionizing) energy loss processes, which are important for quantifying effects such as damage and charge deposition but have been little studied. For energies at which nuclear stopping is significant, we find that the total energy lost to electronic stopping processes is proportional to E^4/3/Z^2/3 where E and Z are the incident ion energy and species, respectively. From these measurements, we also derive the ratio of the nuclear to electronic stopping power as a function of ion energy. In the high energy limit at which nuclear stopping power becomes an insignificant component of energy loss, the total energy lost to nuclear stopping is approximately constant: this constant is the equivalent to the energy defect of silicon solid state detectors. This constant equals 0.72+/-0.31 keV for H^+, 3.53+/-0.53 keV for He^+, and 173+/-9.8 keV for Si^+, where the Si data is from Sattler[Phys.Rev.138(1965)1815].
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2002
- Bibcode:
- 2002APS..MARU18006H