Epitaxial oxide thin film growth on sulfide buffer layers on Si
Abstract
There has been growing interest in growth of oxide thin films due to their various applications such as optoelectronic and ferroelectrics devices. One of the most useful oxides for optoelectronic applications is a ZnO with wide band gap of 3.2 eV. Excitonic emission from ZnO motivated recent development for the optoelectronic. Also, Li doped ZnO was known as thin film ferroelectrics. Although ZnO is useful in many respects, ZnO-Si integration will have to be achieved for actual applications. However, ZnO-Si integration involves fundamental problem of oxide growth on Si, i.e., disordered interface formation (SiO2) and significant lattice mismatch In general, most binary sulfides have high ionicity and soft surface. In these contexts, sulfide can be a new class of buffer for the growth of oxides on Si. In this study, ZnO film growth on sulfide buffers on Si is demonstrated by laser MBE. For fast optimization of this technique, combinatorial exploration method is utilized. Unique interface between ZnO film and sulfide buffer is investigated by transmission electron microscopy.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2002
- Bibcode:
- 2002APS..MARU17004Y