Acceptor photo-ionization in p-type III-nitride materials
Abstract
One of the pervasive challenges facing III-nitride device developers is achieving good p-doping, particularly in high aluminum content AlGaN alloys. In this talk, we discuss the optical properties of acceptors in p-type III-nitride materials, focusing on direct photo-ionization of deep acceptors. We report a variety of test structures designed and fabricated on p-type III-Nitride material from several sources. The effects of optical illumination on carrier concentration and mobility are presented as functions of absorbed photon energy. Theoretical aspects of acceptor photo-ionization are discussed. Finally, we explore the ramifications of these effects on advanced III-nitride device development.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2002
- Bibcode:
- 2002APS..MART19003S