Structural Study of Thin Film Photovoltaics using Extended X-ray Absorption Fine Structure
Abstract
Extended fine structure above the x-ray absorption edge can be used to determine the atomic number, inter-atomic distances and coordination number of the atoms surrounding the absorbing element. When applied to photovoltaic materials, in which the thin film structure often differs greatly from the bulk structure, the analysis provides a characterization of the local environment often unattainable with other techniques such as x-ray diffraction. We will discuss our findings on CuInSe2 as compared with a theoretical model and identify defects directed related to the material’s electrical properties. At issue is not only the resulting atomic parameters of the analysis, but also the possible effect of the technique, as it has been proposed that the x-rays may alter the structure, create further defects in the samples, and thereby change their photovoltaic performance.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2002
- Bibcode:
- 2002APS..MART18010S