Temperature-dependent Exciton Photoluminescence from Random Alloys
Abstract
We present a theory for the exciton photoluminescence (PL) lineshape in random bulk semiconductor alloys and compare the result with recently observed temperature-dependent data from undoped Al_xGa_1-xAs alloys. The model is based on self-consistent scattering from the random alloy potential at high temperatures and nonequilibrium distribution of the localized excitons at low temperatures. The model explains several key features of the observed PL lineshape data. The data show a high-energy Lorentzian-like tail and low-energy Gaussian-like tail at high temperatures. The PL intensity is insensitive to the temperature at low temperatures and decays rapidly with the temperature at high temperatures. The temperature dependence of the linewidth will also be discussed.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2002
- Bibcode:
- 2002APS..MARS17006L