Band Anticrossing in GaP_1-xNx Alloys
Abstract
The optical properties of GaP_1-xNx alloys grown by gas-source molecular-beam epitaxy have been studied using photoluminescence spectroscopy under hydrostatic pressures up to 133 kbar at 30K. The peak energy of the band edge photoluminescence spectrum shows an unusual, non-monotonic dependence on the hydrostatic pressure. The anomalous results are explained in terms of an anticrossing interaction of localized nitrogen states with the Γ band edge at low pressures and with the X band edge at large hydrostatic pressures. By fitting with the experimental data, the coupling constant describing the interaction strength is determined to be 3.05 eV between the localized nitrogen states and the Γ band edge, and 0.9 eV between the localized nitrogen states and the X band edge. Supported by US DOE under Contract No. DE-AC03-76SF00098.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2002
- Bibcode:
- 2002APS..MARM17009W