Enhancement of switching stability of tunneling magnetoresistance system with artificial ferrimagnet
Abstract
In the study of spin dependent magnetic tunneling junctions, the switching stability of the magnetically hard layer is a crucial issue in magnetic random access memory applications[1]. After repeated cycling of the soft layer, the magnetization of the hard layer is demagnetized by the stray field from the domain wall created during the switching[2]. The magnitude of the stray field from the soft layer is large enough to switch a domain in the hard layer. Therefore, reducing this stray field is necessary to increase the switching stability. In this study, we explore an artificial ferrimagnet to replace the usual soft layer in order to reduce stray field. The ferrimagnet consists of an antiferromagnetically coupled trilayer that has two ferromagnetic layers of unequal thickness and opposite magnetization orientation. Since the sign of stray field of the two ferromagnetic layers is opposed, the total stray field is greatly reduced. [Supported by the US DOE, BES-MS, under Contract W-31-109-ENG-38.] [1] S. Gider et al. Science 281, 797 (1998). [2] L. Thomas et al. Phys. Rev. Lett. 84, 1816 (2000).
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2002
- Bibcode:
- 2002APS..MARL15009Y