Piezoelectric Effect on Al0.35-£_In£_Ga0.65N/GaN Heterostructures
Abstract
Al0.35-£_In£_Ga0.65N/GaN heterostructures have been studied by using transmission electron microscopy, photoluminescence and Shubnikov-de Haas (SdH) measurements. In the sample of £_ < 0.01%, two SdH oscillations beat each other due to the population of the lowest two subbands. The carrier concentrations of these two subbands are 1.398 and 1.248x1013 cm-2 and the electric field at the interface is reduced to 2.19x104 V/cm, which is one order of magnitude smaller than that of Al0.35Ga0.65N/GaN heterostructure. We suggest that a small fraction of In-atoms in the Al0.35-£_In£_Ga0.65N can be used as a tuning parameter to control the strain and the piezoelectric field at the interface.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2002
- Bibcode:
- 2002APS..MARC33188T