Simulation of electron storage in Ge/Si hetero-nanocrystal memory
Abstract
The electron storage characteristics of Ge/Si hetero-nanocrystal metal-oxide-semiconductor field-effect transistor memory are investigated by computer simulation. Owing to the Ge/Si hetero-energy bands, the retention time increases several orders compared with that of Si nanocrystal memory, and the programming time achieves the order of μs. The trade-off between the high-speed programming and the long retention time could be solved efficiently with the present Ge/Si hetero-nanocrystal structure.
- Publication:
-
Solid State Electronics
- Pub Date:
- May 2001
- DOI:
- 10.1016/S0038-1101(01)00033-8
- Bibcode:
- 2001SSEle..45..767Y