Thermal effect on quantum confinement in ZnS 0.06Se 0.94/Zn 0.8Cd 0.2Se quantum wells
Abstract
ZnS 0.06Se 0.94/Zn 0.8Cd 0.2Se quantum wells (QW) were studied by temperature-dependent photoluminescence (PL) measurement. We observed two PL peaks due to the band-to-band transition in ZnS 0.06Se 0.94 barrier, E g(0)=2.819 eV, and the transition of heavy hole to first conduction subband in Zn 0.8Cd 0.2Se well, E hh1 (0)=2.545 eV. The relative thermal coefficients of these two constituent materials are quite different, resulting in a temperature-dependent quantum confinement. The reduction of the quantum confinement at high temperatures induces a leakage of carrier and leads to a quenching of the PL intensity. The activation energy for the PL quench is about 188.4 meV.
- Publication:
-
Solid State Communications
- Pub Date:
- October 2001
- DOI:
- 10.1016/S0038-1098(01)00369-6
- Bibcode:
- 2001SSCom.120..155L