100-nm node lithography with KrF?
Abstract
We present results looking into the feasibility of 100-nm Node imaging using KrF, 248-nm, exposure technology. This possibility is not currently envisioned by the 1999 ITRS Roadmap which lists 5 possible options for this 2005 Node, not including KrF. We show that double-exposure strong phase- shift, combined with two mask OPC, is capable of correcting the significant proximity effects present for 100-nm Node imaging at these low k1 factors. We also introduce a new PSM Paradigm, dubbed 'GRATEFUL,' that can image aggressive 100-nm Node features without using OPC. This is achieved by utilizing an optimized 'dense-only' imaging approach. The method also allows the re-use of a single PSM for multiple levels and designs, thus addressing the mask cost and turnaround time issues of concern in PSM technology.
- Publication:
-
Optical Microlithography XIV
- Pub Date:
- September 2001
- DOI:
- 10.1117/12.435719
- Bibcode:
- 2001SPIE.4346..191F