Nonequilibrium carriers in GaAs grown by low-temperature molecular beam epitaxy
Abstract
Electronic properties of GaAs grown by low-temperature molecular beam epitaxy are analyzed using a model that assumes a semiconducting matrix with embedded semimetallic As clusters. The static and high-frequency conductivity, Hall effect, lifetime of photoexcited carriers, current-voltage characteristic, and the screening phenomena are all considered. Model results are compared with existing experimental data and a proposal is given for new experiments that could determine currently unknown properties of the material.
- Publication:
-
Physical Review B
- Pub Date:
- February 2001
- DOI:
- 10.1103/PhysRevB.63.085203
- Bibcode:
- 2001PhRvB..63h5203R
- Keywords:
-
- 72.80.Ey;
- 72.80.Tm;
- 72.20.Jv;
- III-V and II-VI semiconductors;
- Composite materials;
- Charge carriers: generation recombination lifetime and trapping